Memory system and data channel initialization method for memory system

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United States of America Patent

PATENT NO 7296110
APP PUB NO 20050240718A1
SERIAL NO

11071586

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Abstract

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Provided is a memory system and a method that can initialize a data channel at a high speed without the need to increase the number of pins in a semiconductor memory device, and not requiring a circuit to perform an initialization. The memory system includes a memory module equipped with a plurality of semiconductor memory devices; a memory controller controlling the semiconductor memory devices; and a data channel and a command/address channel connected between the plurality of semiconductor memory devices and the memory controller, wherein read latencies and write latencies of the plurality of semiconductor memory devices are controlled by the memory controller.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Hoe-ju Yongin-si, KR 57 1280
Lee, Jung-bae Yongin-si, KR 126 2842

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