Semiconductor method and device with mixed orientation substrate
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United States of America Patent
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Nov 20, 2007
Grant Date -
Aug 3, 2006
app pub date -
Feb 1, 2005
filing date -
Feb 1, 2005
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor body having semiconductor material of a first crystal orientation. A first transistor is formed in the semiconductor material of the first crystal orientation. An insulating layer overlies portions of the semiconductor body and a semiconductor layer overlies the insulating layer. The semiconductor layer has a second crystal orientation. A second transistor is formed in the semiconductor layer having the second crystal orientation. In the preferred embodiment, the semiconductor body is (100) silicon, the first transistor is an NMOS transistor, the semiconductor layer is (110) silicon and the second transistor is a PMOS transistor.
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