Apparatus and methods for overlay, alignment mark, and critical dimension metrologies based on optical interferometry
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United States of America Patent
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Nov 20, 2007
Grant Date -
Dec 15, 2005
app pub date -
May 23, 2005
filing date -
May 21, 2004
priority date (Note) -
Expired
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Abstract
Methods and apparatus based on optical homodyne displacement interferometry, optical coherent-domain reflectometry (OCDR), and optical interferometric imaging are disclosed for overlay, alignment mark, and critical dimension (CD) metrologies that are applicable to microlithography applications and integrated circuit (IC) and mask fabrication and to the detection and location of defects in/on unpatterned and patterned wafers and masks. The metrologies may also be used in advanced process control (APC), in determination of wafer induced shifts (WIS), and in the determination of optical proximity corrections (OPC).
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