Low temperature sintering ceramic composition for high frequency, method of fabricating the same and electronic component
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United States of America Patent
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Nov 27, 2007
Grant Date -
Aug 3, 2006
app pub date -
Apr 14, 2004
filing date -
Apr 15, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A low temperature sintering ceramic composition can be sintered at 850 to 1,000.degree. C., and the sintered ceramic has a low dielectric constant (9 or less at 16 Ghz or more) and a high Qf (10,000 or more). The composition can be co-sintered with wiring material containing Ag, Au, or Cu. The ceramic composition includes (by mass) CaO, MgO, and SiO.sub.2 in total: over 60% to 98.6%; Bi.sub.2O.sub.3: from 1% to under 35%; and Li.sub.2O: from 0.4% to under 6%; wherein (CaO+MgO) and SiO.sub.2 are contained in the molar ratio of from 1:1 to under 1:2.5.
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