High-voltage transistor device having an interlayer dielectric etch stop layer for preventing leakage and improving breakdown voltage
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United States of America Patent
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Nov 27, 2007
Grant Date -
Jun 1, 2006
app pub date -
Nov 29, 2004
filing date -
Nov 29, 2004
priority date (Note) -
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Abstract
A high-voltage transistor device with an interlayer dielectric (ILD) etch stop layer for use in a subsequent contact hole process is provided. The etch stop layer is a high-resistivity film having a resistivity greater than 10 ohm-cm, thus leakage is prevented and breakdown voltage is improved when driving a high voltage greater than 5V at the gate site. A method for fabricating the high-voltage device is compatible with current low-voltage device processes and middle-voltage device processes.
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