In-situ wafer and probe desorption using closed loop heating
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United States of America Patent
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Dec 4, 2007
Grant Date -
May 11, 2006
app pub date -
Nov 5, 2004
filing date -
Nov 5, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor wafer is tested by heating an electrical contact to a temperature sufficient to desorb water vapor and/or organic material from a surface thereof. The semiconductor wafer is also heated to a temperature sufficient to desorb water vapor and/or organic material from a top surface thereof. The heated surface of the contact is caused to touch the heated top surface of the semiconductor wafer. An electrical stimulus is applied between the heated surface of the contact and the heated top surface of the semiconductor wafer when the surface of the contact is touching the top surface of the semiconductor wafer. A response of the semiconductor wafer to the applied electrical stimulus is measured and at least one electrical property of the semiconductor wafer is determined from the measured response.
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