Electron beam duplication lithography method
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United States of America Patent
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Dec 11, 2007
Grant Date -
Jul 13, 2006
app pub date -
Feb 14, 2006
filing date -
Apr 17, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted through an electric field lens or magnetic field lens, or a combination thereof from an electron field emission material formed into a pattern on a flat surface of a substrate. The result is that a congruent or similar pattern is lithographed by electron beam exposure onto an electron beam resist film from a field emission film having the congruent or similar pattern to be created.
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