Structure and method for implementing oxide leakage based voltage divider network for integrated circuit devices
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United States of America Patent
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Dec 11, 2007
Grant Date -
Nov 1, 2007
app pub date -
Apr 28, 2006
filing date -
Apr 28, 2006
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Abstract
A voltage divider device includes a double gate field effect transistor (FET) having a first gate and a second gate disposed at opposite sides of a body region. An input voltage is coupled between the first and second gates, and an output voltage is taken from at least one of a source of the FET and a drain of the FET, wherein the output voltage represents a divided voltage with respect to the input voltage.
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