Flash memory device having improved program rate
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 11, 2007
Grant Date -
N/A
app pub date -
Aug 29, 2005
filing date -
Aug 29, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method is provided for programming a nonvolatile memory device including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window that identifies a plurality of memory cells in the array. A first group of memory cells to be programmed is identified from the plurality of memory cells in the programming window. The first group of memory cells is programmed and a programming state of the first group of memory cells is verified.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully