States encoding in multi-bit flash cells

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United States of America Patent

PATENT NO 7310347
APP PUB NO 20050201401A1
SERIAL NO

11035807

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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N data bits are stored in .left brkt-top.N/M.right brkt-bot. cells by programming each cell with up to M of the bits according to a valid, nonserial bit ordering that satisfies one of the following criteria: Either the number of threshold voltage comparisons needed to read all M bits sequentially is at most 1 more than the smallest such number, or the largest number of threshold voltage comparisons needed to read any bit is minimized, or the smallest number of threshold voltage comparisons needed to read any bit is minimized, or the difference between the largest and smallest number of threshold voltage comparisons needed to read any bit statically is at most 1 more than the smallest such difference, or the difference between the largest and smallest number of threshold voltage comparisons needed to read any bit dynamically is minimized.

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Patent Owner(s)

Patent OwnerAddress
SANDISK ISRAEL LTD8 ATIR YEDA ST KFAR SABA 4464308

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lasser, Menahem Kohav Yair, IL 186 8414

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