Self-reparable semiconductor and method thereof
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United States of America Patent
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Dec 25, 2007
Grant Date -
Mar 8, 2007
app pub date -
Nov 8, 2006
filing date -
Dec 2, 2002
priority date (Note) -
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Abstract
A self-reparable semiconductor comprises first and second physical layer devices each including first and second subfunctional units that cooperate to provide first and second ports associated with a multi-bit Gigabit physical layer device. A first spare physical layer device includes first and second subfunctional units. The first sub-functional units are functionally interchangeable. The second sub-functional units are functionally interchangeable. Switching devices communicate with the first and second subfunctional units of the first, second and first spare physical layer devices and replace at least one of the first and second sub-functional units of at least one of the first and second physical layer devices with at least one of the first and second sub-functional units of the first spare physical layer device when the at least one of the first and second sub-functional units is non-operable.
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