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Abstract

A method for protecting NROM devices from charge damage during process steps, the method including providing X-decoder structure for word line connections, wherein each word line is connected to a pair of transistors, a PMOS transistor and an NMOS transistor the PMOS transistors sharing a common deep N well and the NMOS transistors connected to a P well, wherein during negative charging, the NMOS transistors shunt leakage current to ground, and during positive charging, the PMOS transistors shunt leakage current to ground, providing an N+ tap connected to the N well and connecting the N+ tap to a positive voltage clamping device, and connecting all the P wells together to a common P+ tap and connecting the P+ tap to a negative voltage clamping device, wherein during process steps, the negative and positive voltage clamping devices direct leakage current to ground.

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First Claim