Thermal process for creation of an in-situ junction layer in CIGS

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Jan 15, 2008
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May 18, 2006
app pub date
Nov 10, 2005
filing date
Nov 10, 2004

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Abstract

The present invention relates generally to the field of photovoltaics and more specifically to manufacturing thin-film solar cells using a thermal process. Specifically, a method is disclosed to manufacture a CIGS solar cell by an in-situ junction formation process.

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DAYSTAR TECHNOLOGIES INC	13 CORPORATE DRIVE HALFMOON NY 12065

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Tuttle, John R	Mechanicville, NY	234	13238

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Thermal process for creation of an in-situ junction layer in CIGS

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United States of America Patent

11272386

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PATENT NO	7319190
APP PUB NO	20060102230A1
SERIAL NO	11272386
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
January 15, 2008	US,7319190,B2 US7319190B2	GRANTED PATENT AS SECOND PUBLICATION
May 18, 2006	US,20060102230,A1 US20060102230A1	FIRST PUBLISHED PATENT APPLICATION

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