Voltage reference generator circuit using low-beta effect of a CMOS bipolar transistor

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United States of America Patent

PATENT NO 7321225
APP PUB NO 20050218879A1
SERIAL NO

10813837

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Abstract

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A voltage reference generator has been discovered that generates a stable reference voltage that is less than the bandgap voltage of silicon for power supply voltages less than 2V, yet provides sufficient voltage headroom to operate a cascaded current mirror. In one embodiment, the voltage reference generator has a power supply rejection ratio of at least 60 dB and has improved noise performance as compared to traditional bandgap circuits. These advantages are achieved by leveraging the low-beta effect of a CMOS bipolar transistor to generate a current proportional to an absolute temperature.

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Patent Owner(s)

Patent OwnerAddress
SILICON LABORATORIES INC400 W CESAR CHAVEZ AUSTIN TX 78701

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Del, Signore Bruce P Hollis, NH 17 414
Garlapati, Akhil K Boston, MA 9 142
Pietruszynski, David Austin, TX 4 114

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