Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
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United States of America Patent
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Jan 29, 2008
Grant Date -
Mar 9, 2006
app pub date -
Aug 19, 2005
filing date -
Aug 19, 2004
priority date (Note) -
Expired
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Abstract
A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to radiation that carries spatial information to generate exposure-induced changes in the layer of photoresist that form a pattern having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining at least one of (1) locations of the one or more features of the pattern and (2) magnitudes of the exposure-induced changes.
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