Organoelement resists for EUV lithography and methods of making the same
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United States of America Patent
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Feb 5, 2008
Grant Date -
Dec 2, 2004
app pub date -
Mar 12, 2004
filing date -
Mar 12, 2003
priority date (Note) -
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Abstract
Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.
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