Process for modifying offset voltage characteristics of an interferometric modulator
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United States of America Patent
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Feb 5, 2008
Grant Date -
Mar 30, 2006
app pub date -
Aug 19, 2005
filing date -
Sep 27, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An interferometric modulator manufactured according to a particular set of processing parameters may have a non-zero offset voltage. A process has been developed for modifying the processing parameters to shift the non-zero offset voltage closer to zero. For example, the process may involve identifying a set of processing parameters for manufacturing an interferometric modulator that results in a non-zero offset voltage for the interferometric modulator. The set of processing parameters may then be modified to shift the non-zero offset voltage closer to zero. For example, modifying the set of processing parameters may involve modifying one or more deposition parameters used to make the interferometric modulator, applying a current (e.g., a counteracting current) to the interferometric modulator, and/or annealing the interferometric modulator. Interferometric modulators made according to the set of modified processing parameters may have improved performance and/or simpler drive schemes.
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