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Abstract

A method for reading a NAND flash memory device having plural normal cells, which utilizes plural reference bit lines associated with plural reference cells to read the normal cells in one phase to reduce the read time, is disclosed. The method comprises ramping up a selected word line voltage in a predetermined period and reading the normal cells with a zero state, a first state, a second state and a third state in the predetermined period. The present invention also discloses a memory cell array concerning the method for reading a NAND flash memory device. The memory cell array, which utilizes a voltage generator and plural reference cells to read the normal cells in one phase to reduce the amount of precharging and discharging of the normal bit lines, comprises plural normal cell blocks arranged in parallel, plural reference cell blocks interleaved between the normal cell blocks, plural normal bit lines coupled to the normal cell blocks, plural reference bit lines coupled to the reference cell blocks and a voltage generator.

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First Claim