Method of operating a programmable resistance memory array
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United States of America Patent
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Mar 4, 2008
Grant Date -
Jan 18, 2007
app pub date -
Sep 21, 2006
filing date -
Oct 1, 2004
priority date (Note) -
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Abstract
A method of operating a programmable resistance memory array. The method comprises writing to all of the programmable resistance elements within the same row of the memory array at substantially the same time. The programmable resistance elements preferably include phase-change materials such as chalcogenides.
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