MIS-based sensors with hydrogen selectivity

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United States of America Patent

PATENT NO 7340938
APP PUB NO 20060196246A1
SERIAL NO

11361310

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Abstract

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The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.

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Patent Owner(s)

  • NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC;THE REGENTS OF THE UNIVERSITY OF COLORADO, A BODY CORPORATE;THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bastasz, Robert J Livermore, CA 3 16
Li, Dongmei Boulder, CO 43 54
McDaniel, Anthony H Livermore, CA 3 11
Medlin, J William Boulder, CO 1 2

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