Apparatus and method for measurement of critical dimensions of features and detection of defects in UV, VUV, and EUV lithography masks
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United States of America Patent
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Mar 18, 2008
Grant Date -
Nov 17, 2005
app pub date -
May 6, 2005
filing date -
May 6, 2004
priority date (Note) -
Expired
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Abstract
Methods and apparatus are disclosed for measurement of critical dimensions (CD) of features and detection of defects in reflecting UV, VUV, and EUV lithography masks and in transmitting UV and VUV lithography masks. The measured CD's may be used in the determination of optical proximity corrections (OPC) and/or in mask fabrication process control. The transmitting masks may comprise binary and various types of phase shift masks.
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