Programming memory devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7345924
APP PUB NO 20070047326A1
SERIAL NO

11546171

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Abstract

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A target memory cell of a memory device is programmed by applying a programming voltage to a word line that includes the target memory cell, determining whether the target memory cell is programmed, and increasing the programming voltage by a step voltage if it is determined that the target memory cell is not programmed. An initial programming voltage and the step voltage are each selectable after fabrication of the memory device.

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Patent Owner(s)

Patent OwnerAddress
ROUND ROCK RESEARCH LLC26 DEER CREEK LANE MT KISCO NY 10549

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Jin-Man Santa Clara, CA 64 1295
Louie, Benjamin Fremont, CA 83 1191
Nazarian, Hagop A San Jose, CA 51 870
Nguyen, Dzung H Fremont, CA 28 439
Yip, Aaron Santa Clara, CA 117 1301

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