Diode side pumped high pulse energy Nd:YLF lasers

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United States of America Patent

PATENT NO 7346092
SERIAL NO

11303245

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to the invention, a diode side pumped laser is provided. The laser has an optical cavity formed between a first and a second reflective surface. A Nd:YLF lasing medium is located within the cavity along its optical axis. The Nd:YLF lasing medium can desirably be a single Nd:YLF lasing rod which has a length of 90 mm or more. A plurality of diode bars are provided in optical communication with the Nd:YLF lasing medium preferably a lasing rod. The diode bars extend along substantially the pumpable length of the lasing rod and radially around the periphery of the lasing rod. The diode bars have radiation outlets in optical communication with the lasing rod for supplying electromagnetic radiation on pumping paths to the rod. The lasing rod receives an average linear power density from the diode bars of less than 50 watts/cm. The pumping paths traverse substantially the entire pumpable length of the lasing rod substantially perpendicular to the direction of propagation of energy in the laser cavity. The pumping paths traverse the lasing rod from at least two directions on substantially intersecting paths. The resulting laser produces 30 mj or more per pulse.

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Patent Owner(s)

Patent OwnerAddress
PHOTONICS INDUSTRIES INTERNATIONAL INC25 EAST LOOP ROAD STONY BROOK NY 11790

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yin, Yusong Stonybrook, NY 24 285

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