Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications
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United States of America Patent
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Mar 25, 2008
Grant Date -
May 1, 2003
app pub date -
Oct 26, 2001
filing date -
Oct 26, 2001
priority date (Note) -
Expired
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Abstract
This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O-- or an E-S-- bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.
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