Process of fabricating a semiconductor device
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United States of America Patent
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Apr 1, 2008
Issued Date -
N/A
app pub date -
Apr 26, 2004
filing date -
Mar 12, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device having high operating performance and reliability is disclosed, and its fabrication process is also disclosed.In an n-channel type TFT 302, an Lov region 207 is disposed, whereby a TFT structure highly resistant to hot carriers is realized. Further, in an n-channel type TFT 304 forming a pixel portion, Loff regions 217 to 220 are disposed, whereby a TFT structure having a low OFF-current value is realized. In this case, in the Lov region, the n-type impurity element exists at a concentration higher than that of the Loff regions, and the whole of the n-type impurity region (b) which constitutes the Lov region is sufficiently activated by optical annealing, so that a good junction portion is formed between the n-type impurity region and the channel forming region.
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