Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element

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Apr 8, 2008
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Feb 16, 2006
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Aug 12, 2004
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Aug 12, 2004

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Abstract

A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.

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MICRON TECHNOLOGY, INC.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Campbell, Kristy A	Boise, ID	139	2482

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Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element

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United States of America Patent

10916421

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PATENT NO	7354793
APP PUB NO	20060035403A1
SERIAL NO	10916421
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
April 08, 2008	US,7354793,B2 US7354793B2	GRANTED PATENT AS SECOND PUBLICATION
February 16, 2006	US,20060035403,A1 US20060035403A1	FIRST PUBLISHED PATENT APPLICATION

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10916421

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