Directionally controlled growth of nanowhiskers
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United States of America Patent
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Apr 8, 2008
Grant Date -
Jan 26, 2006
app pub date -
Feb 3, 2005
filing date -
Feb 6, 2004
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Expired
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Abstract
Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.
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