Thin-film transistor
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United States of America Patent
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Apr 8, 2008
Issued Date -
N/A
app pub date -
Aug 18, 2003
filing date -
May 29, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor.
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