Methods of forming SRAM constructions
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United States of America Patent
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Apr 15, 2008
Grant Date -
Jun 15, 2006
app pub date -
Feb 8, 2006
filing date -
Jun 3, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention includes SRAM constructions comprising at least one transistor device having an active region extending into a crystalline layer comprising Si/Ge. A majority of the active region within the crystalline layer is within a single crystal of the crystalline layer, and in particular aspects an entirety of the active region within the crystalline layer is within a single crystal of the crystalline layer. The SRAM constructions can be formed in semiconductor on insulator assemblies, and such assemblies can be supported by a diverse range of substrates, including, for example, glass, semiconductor substrates, metal, insulative materials, and plastics. The invention also includes electronic systems comprising SRAM constructions.
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