Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device
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United States of America Patent
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Apr 15, 2008
Grant Date -
Aug 12, 2004
app pub date -
Mar 20, 2002
filing date -
Apr 4, 2001
priority date (Note) -
Expired
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Abstract
The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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