Method and apparatus for in-situ film stack processing
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United States of America Patent
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Apr 15, 2008
Grant Date -
Oct 13, 2005
app pub date -
Apr 8, 2004
filing date -
Apr 8, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Embodiments of a cluster tool, processing chamber and method for processing a film stack are provided. In one embodiment, a method for in-situ etching of silicon and metal layers of a film stack is provided that includes the steps of etching an upper metal layer of the film stack in a processing chamber to expose a portion of an underlying silicon layer, and etching a trench in the silicon layer without removing the substrate from the processing chamber. The invention is particularly useful for thin film transistor fabrication for flat panel displays.
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