Semiconductor laser element having tensile-strained quantum-well active layer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7362786
APP PUB NO 20050195875A1
SERIAL NO

11073521

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

In a semiconductor laser element, a lower cladding layer of AlGaInP of the first conductive type, a lower optical waveguide layer of AlGaInP, a quantum-well active layer of InGaP, an upper optical waveguide layer of AlGaInP, and an upper cladding layer of AlGaInP of the second conductive type are formed in this order on a substrate of GaAs of the first conductive type. The degree of mismatch .DELTA.a/a with the substrate and the thickness dw of the quantum-well active layer satisfy the conditions, -0.6%.ltoreq..DELTA.a/a.ltoreq.-0.3% and 10 nm.ltoreq.dw.ltoreq.20 nm. In addition, the resonator length Lc and the reflectances Rf and Rr of the opposite end facets satisfy the conditions, Lc.gtoreq.400 .mu.m and Rf.times.Rr.gtoreq.0.5.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATION491-100 OKA KAMINAKA-CHO ANAN-SHI TOKUSHIMA 774-8601

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asano, Hideki Kanagawa-ken, JP 65 313

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation