Semiconductor laser element formed on substrate having tilted crystal orientation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7366216
APP PUB NO 20050185687A1
SERIAL NO

11060559

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or smaller, the tilt angle of the crystal orientation of the principal face is 8 to 54.7 degrees. When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or greater, the tilt angle of the crystal orientation of the principal face is 13 to 54.7 degrees.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATIONANAN-SHI TOKUSHIMA 774-8601

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohgoh, Tsuyoshi Kanagawa-ken, JP 8 23

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation