Semiconductor laser element formed on substrate having tilted crystal orientation
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United States of America Patent
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Apr 29, 2008
Grant Date -
Aug 25, 2005
app pub date -
Feb 18, 2005
filing date -
Feb 19, 2004
priority date (Note) -
Expired
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Abstract
A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or smaller, the tilt angle of the crystal orientation of the principal face is 8 to 54.7 degrees. When the total thickness of the at least one AlGaInP or GaInP layer is 1 micrometer or greater, the tilt angle of the crystal orientation of the principal face is 13 to 54.7 degrees.
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