Mirror structure with single crystal silicon cross-member
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United States of America Patent
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May 6, 2008
Grant Date -
Apr 27, 2006
app pub date -
Dec 8, 2005
filing date -
Jun 18, 2004
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Abstract
Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.
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