Small electrode for resistance variable devices
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United States of America Patent
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May 20, 2008
Grant Date -
Jun 22, 2006
app pub date -
Dec 22, 2004
filing date -
Dec 22, 2004
priority date (Note) -
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Abstract
A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and second electrodes, and the second end of the first electrode is in contact with the resistance variable material. Methods for forming the memory element are also provided.
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