Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature
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United States of America Patent
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May 20, 2008
Grant Date -
Nov 10, 2005
app pub date -
Dec 22, 2004
filing date -
May 10, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a method for fabricating a metal interconnection line with use of a barrier metal layer formed in a low temperature. The method includes the steps of: forming an inter-layer insulation layer on a substrate; etching predetermined regions of the inter-layer insulation layer to form a plurality of contact openings; forming an ohmic metal layer on the contact openings and the etched inter-layer insulation layer; forming a seed layer on the ohmic metal layer; forming a metal layer on the seed layer and nitriding the metal layer in a repeated number of times to form a barrier metal layer; and forming a metal interconnection line on the barrier metal layer by burying the contact openings.
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