Gallium nitride based III-V group compound semiconductor device and method of producing the same

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United States of America Patent

PATENT NO 7375383
APP PUB NO 20070178689A1
SERIAL NO

11714890

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Abstract

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A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

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Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATIONANAN-SHI TOKUSHIMA 774-8601

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bando, Kanji Anan, JP 11 811
Nakamura, Shuji Anan, JP 443 15682
Senoh, Masayuki Anan, JP 20 1762
Yamada, Motokazu Anan, JP 110 2524
Yamada, Takao Anan, JP 66 1749

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