Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
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United States of America Patent
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May 20, 2008
Grant Date -
Jan 25, 2007
app pub date -
Jul 19, 2006
filing date -
Jul 20, 2005
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Abstract
In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.
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