Silicon-rich silicon nitrides as etch stops in MEMS manufacture
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United States of America Patent
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Jun 3, 2008
Grant Date -
Jul 26, 2007
app pub date -
Jan 18, 2006
filing date -
Jan 18, 2006
priority date (Note) -
Expired
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Abstract
The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.
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