Thin film transistor having an etching protection film and manufacturing method thereof
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United States of America Patent
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Jun 10, 2008
Grant Date -
Mar 2, 2006
app pub date -
Sep 1, 2005
filing date -
Sep 2, 2004
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
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