Spacer chalcogenide memory device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7385235
APP PUB NO 20050093022A1
SERIAL NO

10983437

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI HSIN ROAD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

International Classification(s)

  • No Non-US Classification to display

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Hsinchu, TW 118 7130

Cited Art Landscape

Load Citation

Patent Citation Ranking

  • No Patent Citation Ranking to display

Forward Cite Landscape

Load Citation