Treatment of a dielectric layer using supercritical CO.sub.2
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United States of America Patent
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Jun 17, 2008
Grant Date -
Sep 1, 2005
app pub date -
Mar 28, 2005
filing date -
Mar 4, 2002
priority date (Note) -
Expired
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Abstract
A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. In accordance with further embodiments of the invention, a post ash substrate comprising a dielectric material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
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