Metal contact structure for solar cell and method of manufacture
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United States of America Patent
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Jun 17, 2008
Grant Date -
Oct 14, 2004
app pub date -
Apr 10, 2003
filing date -
Apr 10, 2003
priority date (Note) -
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Abstract
In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.
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