Method of depositing an oxide layer on a substrate and a photovoltaic cell using said substrate
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United States of America Patent
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Jun 24, 2008
Grant Date -
Nov 25, 2004
app pub date -
Aug 23, 2002
filing date -
Aug 30, 2001
priority date (Note) -
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Abstract
The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the metal intended to form the oxide, and a dopant in gaseous or liquid form, respectively; establishing a temperature between 130 and 300.degree. C. and a pressure between 0.01 and 2 mbar in the chamber; and then bringing said sources into communication with the chamber, which has the effect of vaporizing the liquids at their surface, of drawing them up into the chamber without having to use a carrier gas, and of making them react therein with the dopant so that the oxide layer is formed on the substrate.
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