Methods and apparatus for forming rhodium-containing layers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 1, 2008
Grant Date -
Aug 23, 2007
app pub date -
Apr 25, 2007
filing date -
Aug 26, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L.sub.yRhY.sub.z is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The alloy barriers protect surrounding materials from oxidation during oxidative recrystallization steps and protect cell dielectrics from loss of oxygen during high temperature processing steps. Also provided are methods for CVD co-deposition of platinum-rhodium alloy diffusion barriers.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully