Resistance variable memory with temperature tolerant materials

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United States of America Patent

PATENT NO 7393798
APP PUB NO 20060231824A1
SERIAL NO

11452356

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Abstract

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A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb.sub.2Se.sub.3, and a metal-chalcogenide layer and methods of forming such a memory device.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Campbell, Kristy A Boise, ID 139 2482

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