Adjustable global tap voltage to improve memory cell yield

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United States of America Patent

PATENT NO 7394708
SERIAL NO

11083812

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Abstract

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A system that increases device yield by correcting improper operation of the device's memory cells due to process variations is disclosed. The device includes an array of memory cells and an adjustable bias voltage circuit, and is coupled to a test circuit that generates a feedback signal indicating whether one or more of the memory cells fail to operate properly. The adjustable bias voltage circuit selectively adjusts a bias voltage tied to the substrate provided to the memory cells in response to the feedback signal to alter the operating characteristics of the memory cells so that all of the memory cells will operate properly. For some embodiments, a plurality of fuses are provided for storing control signals that control the bias voltage provided to the memory cells.

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Patent Owner(s)

Patent OwnerAddress
XILINX INC2100 LOGIC DRIVE SAN JOSE CA 95124

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vadi, Vasisht Mantra San Jose, CA 31 1273

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