Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit

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United States of America Patent

PATENT NO 7395036
APP PUB NO 20060066404A1
SERIAL NO

11216061

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Abstract

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In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detections, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

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Patent Owner(s)

Patent OwnerAddress
MURATA MANUFACTURING CO LTD10-1 HIGASHIKOTARI 1-CHOME NAGAOKAKYO-SHI KYOTO 6178555 ?6178555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akamine, Hitoshi Maebashi, JP 42 665
Koshio, Kazuhiro Komoro, JP 11 193
Takahashi, Kyoichi Fujioka, JP 22 328
Tsuchiya, Masahiro Komoro, JP 142 1067

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