Acicular silicon crystal and process for producing the same
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United States of America Patent
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Jul 8, 2008
Grant Date -
Nov 3, 2005
app pub date -
Sep 4, 2003
filing date -
Sep 19, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
By uniformly forming an indefinite number of microscopic acicular crystals on a surface of a silicon substrate so as to be perpendicular to the surface of the substrate by plasma CVD method using a catalyst, it is possible to reliably, homogeneously and massively form an ultramicroscopic acicular silicon crystal having a substantial cone shape tapered so as to have a radius of curvature of not less than 1 nm to no more than 20 nm at its tip end and having a diameter of bottom surface of not less than 10 nm, and a height equivalent to or more than the diameter of bottom surface, at a desired location.
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